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CMOS integrated single photon counting
avalanche photodiode

For more information please contact: radivoje.popovic@epfl.ch


General Description

A passively quenched single photon counting avalanche photodiode (PQ-SPAD) is fully integrated in a conventional CMOS process. A novel design technique to create an efficient guard-ring structure allows the fabrication avalanche photodiodes in an industrial CMOS process. Co-integration of passive quenching circuit (quenching resistor and fast comparator) and photodiode leads to a robust pulse and a dead time as low as 32ns. The timing resolution of the PQ-SPAD is 50ps. The 30um^2 photosensitive area photodiode has a maximum photon detection probability about 20% at wavelength equal to 460nm, a dark count rate of 272Hz and an afterpulsing probability of 5.6%. Current work is concentrated on the integration of arrays.

Figure 1. CMOS integrated PQ-SPAD: below the pads photodiode, quenching resistor and comparator can be seen.
Figure 2. One by four array of actively quenched SPAD


Possible applications

  • fluorescence detection in biotechnologies applications
  • quantum cryptography
  • optical time domain reflectometry
  • photoluminescence detection
  • time of flight ranging/scanning system
  • flame detection

Publications

1. A. Rochas, G. Ribordy, B. Furrer, P.A. Besse and R.S. Popovic, "First Passively-Quenched Single Photon Counting Avalanche Photodiode Element Integrated in a Conventional cmos Process with 32ns Dead Time", to be published in proceedings of 5th International Conference on Application of Photonic Technology ICAPT 2002, Quebec City, June 2/6 2002

2. A. Rochas, A.R.Pauchard, P.A.Besse, D.Pantic, Z.Prijic, R.S.Popovic, "Low-Noise Silicon Avalanche Photodiodes Fabricated in Conventional CMOS Technologies", IEEE Trans. on Electron Devices, Vol 49. No 3., March 2002, Pages 387-394.

3. A.Rochas, P.A.Besse and R.S. Popovic, " A Geiger mode avalanche photodiode fabricated in a conventional CMOS technology", Proceedings of ESSDERC 2001, 11-13 Sept. 2001, Pages 483-486.

 
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