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CMOS integrated single photon counting
avalanche photodiode
For more information please contact: radivoje.popovic@epfl.ch
General Description
A passively quenched single photon counting avalanche photodiode (PQ-SPAD)
is fully integrated in a conventional CMOS process. A novel design technique
to create an efficient guard-ring structure allows the fabrication avalanche
photodiodes in an industrial CMOS process. Co-integration of passive quenching
circuit (quenching resistor and fast comparator) and photodiode leads
to a robust pulse and a dead time as low as 32ns. The timing resolution
of the PQ-SPAD is 50ps. The 30um^2 photosensitive area photodiode has
a maximum photon detection probability about 20% at wavelength equal to
460nm, a dark count rate of 272Hz and an afterpulsing probability of 5.6%.
Current work is concentrated on the integration of arrays.
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Figure 1. CMOS integrated PQ-SPAD:
below the pads photodiode, quenching resistor and comparator can
be seen.
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Figure 2. One by four array of actively
quenched SPAD
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Possible applications

- fluorescence detection in biotechnologies applications
- quantum cryptography
- optical time domain reflectometry
- photoluminescence detection
- time of flight ranging/scanning system
- flame detection
Publications

1. A. Rochas, G. Ribordy, B. Furrer, P.A. Besse and R.S. Popovic, "First
Passively-Quenched Single Photon Counting Avalanche Photodiode Element
Integrated in a Conventional cmos Process with 32ns Dead Time",
to be published in proceedings of 5th International Conference on Application
of Photonic Technology ICAPT 2002, Quebec City, June 2/6 2002
2. A. Rochas, A.R.Pauchard, P.A.Besse, D.Pantic, Z.Prijic, R.S.Popovic,
"Low-Noise Silicon Avalanche Photodiodes Fabricated in Conventional
CMOS Technologies", IEEE Trans. on Electron Devices, Vol
49. No 3., March 2002, Pages 387-394.
3. A.Rochas, P.A.Besse and R.S. Popovic, " A Geiger mode avalanche
photodiode fabricated in a conventional CMOS technology", Proceedings
of ESSDERC 2001, 11-13 Sept. 2001, Pages 483-486.
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